M58BV016FT7T3T View Datasheet(PDF) - Numonyx -> Micron

Part Name

Description

MFG CO.

M58BV016FT7T3T

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Numonyx -> Micron 

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M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

DC and AC parameters

Figure 15. Synchronous burst read - continuous - valid data ready output

K

Output (1) V

V

R

V

tRLKH

V

V

(2)

AI03649

1. Valid Data Ready = Valid Low during valid clock edge.

2. V= Valid output.

3. R is an open drain output with an internal pull up resistor of 1 MΩ. The internal timing of R follows DQ. An external resistor,

typically 300 kΩ. for a single memory on the R bus, should be used to give the data valid set up time required to recognize

that valid data is available on the next valid clock edge.

Figure 16. Synchronous burst read - burst address advance

K

ADD

VALID

L

ADD

G

B

Q0

tGLQV

tBLKH

Q1

Q2

tBHKH

AI03650

49/70

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