MPC5644B View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'MPC5644B' PDF : 114 Pages View PDF
Table 26 shows the data flash memory program and erase characteristics.
Table 26. Data flash memory—Program and erase specifications
Value
Symbol C
Parameter
Min
Typ1
Initial
max2
Unit
Max3
Twprogram
Word (32 bits) program time4
—
T16Kpperase
C 16 KB block pre-program and erase time
—
30
70
500 µs
700
800
5000 ms
Teslat
tESRT
D Erase Suspend Latency
CC
C Erase Suspend Request Rate
—
—
30
30
µs
10
—
—
—
ms
tPABT
D Program Abort Latency
—
—
12
12
µs
tEAPT
D Erase Abort Latency
—
—
30
30
µs
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
4 Actual hardware programming times. This does not include software overhead.
Table 27. Flash memory module life
Symbol C
Parameter
Conditions
Value
Unit
Min
Typ
P/E CC
Retention CC
C Number of program/erase cycles per
—
block for 16 Kbyte blocks over the
operating temperature range (TJ)
Number of program/erase cycles per
—
block for 32 Kbyte blocks over the
operating temperature range (TJ)
Number of program/erase cycles per
—
block for 128 Kbyte blocks over the
operating temperature range (TJ)
C Minimum data retention at 85 °C
average ambient temperature1
Blocks with 0–1,000 P/E
cycles
100,000
10,000
1,000
20
100,000 cycles
100,000 cycles
100,000 cycles
— years
Blocks with 10,000 P/E
10
cycles
— years
Blocks with 100,000 P/E
5
cycles
— years
1 Ambient temperature averaged over duration of application, not to exceed recommended product operating
temperature range.
MPC5646C Microcontroller Data Sheet, Rev. 3
Freescale Semiconductor
Preliminary—Subject to Change Without Notice
61
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