ECC circuitry provides correction of single bit faults and is used to improve further automotive reliability results. Some units
will experience single bit corrections throughout the life of the product with no impact to product reliability.
Table 28. Flash memory read access timing
Symbol C
Parameter
Conditions1
Code flash
memory
Data flash
memory
Max
Unit
fREAD
CC P Maximum frequency for Flash reading 5 wait states 13 wait states
C
3 wait state 9 wait state
D
3 wait states2
—
C
—
7 wait states
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = 40 to 125 °C, unless otherwise specified.
2 Wait states are subject to change per device characterization.
120 2%
80 2%
64 2%
MHz
4.10.2 Flash memory power supply DC characteristics
Table 29 shows the flash memory power supply DC characteristics on external supply.
Table 29. Flash memory power supply DC electrical characteristics
Symbol
Parameter
Conditions1
Value2
Unit
Min Typ Max
ICFREAD3 CC Sum of the current consumption Flash memory module read Code flash
on VDD_HV_A on read access fCPU = 120 MHz 2%4
memory
IDFREAD(3)
Data flash
memory
33 mA
13
ICFMOD(3) CC Sum of the current consumption Program/Erase on-going Code flash
on VDD_HV_A (program/erase) while reading flash memory memory
IDFMOD(3)
registers
fCPU = 120 MHz 2% (4)
Data flash
memory
52 mA
13
ICFLPW(3) CC Sum of the current consumption
on VDD_HV_A during flash
memory low power mode
Code flash
memory
1.1 mA
ICFPWD(3) CC Sum of the current consumption
on VDD_HV_A during flash
IDFPWD(3)
memory power down mode
Code flash
memory
Data flash
memory
150 µA
150
1 VDD = 3.3 V ± 10% / 5.0 V ± 10%, TA = –40 to 125 °C, unless otherwise specified.
2 All values need to be confirmed during device validation.
3 Data based on characterization results, not tested in production.
4 fCPU 120 MHz 2% can be achieved over full temperature 125 °C ambient, 150 °C junction temperature.
MPC5646C Microcontroller Data Sheet, Rev. 3
62
Preliminary—Subject to Change Without Notice
Freescale Semiconductor