4.11.2 Electromagnetic interference (EMI)
The product is monitored in terms of emission based on a typical application. This emission test conforms to the IEC61967-1
standard, which specifies the general conditions for EMI measurements.
Table 31. EMI radiated emission measurement1,2
Symbol C
Parameter
Conditions
Value
Unit
Min Typ Max
— SR — Scan range
—
0.150
1000 MHz
fCPU SR — Operating frequency
—
— 120 — MHz
VDD_LV SR — LV operating voltages
—
— 1.28 — V
SEMI CC T Peak level
VDD = 5 V, TA = 25 °C,
LQFP176 package
No PLL frequency —
modulation
Test
fOSC
conforming to IEC 61967-2,
= 40 MHz/fCPU = 120 MHz
± 2% PLL frequency
modulation
—
— 18 dBµV
— 143 dBµV
1 EMI testing and I/O port waveforms per IEC 61967-1, -2, -4.
2 For information on conducted emission and susceptibility measurement (norm IEC 61967-4), please contact your
local marketing representative.
3 All values need to be confirmed during device validation.
4.11.3 Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the product is stressed in order to determine
its performance in terms of electrical sensitivity.
4.11.3.1 Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according
to each pin combination. The sample size depends on the number of supply pins in the device (3 parts (n+1) supply pin). This
test conforms to the AEC-Q100-002/-003/-011 standard.
Table 32. ESD absolute maximum ratings1,2
Symbol
Ratings
Conditions
Class
Max value3 Unit
VESD(HBM) Electrostatic discharge voltage TA = 25 °C
(Human Body Model)
conforming to AEC-Q100-002
H1C
2000
V
VESD(MM) Electrostatic discharge voltage TA = 25 °C
M2
200
(Machine Model)
conforming to AEC-Q100-003
VESD(CDM) Electrostatic discharge voltage TA = 25 °C
(Charged Device Model)
conforming to AEC-Q100-011
C3A
500
750 (corners)
1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated
Circuits.
2 A device will be defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing shall be performed per applicable
device specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
3 Data based on characterization results, not tested in production.
MPC5646C Microcontroller Data Sheet, Rev. 3
64
Preliminary—Subject to Change Without Notice
Freescale Semiconductor