Table 34. Crystal description
Nominal
frequency
(MHz)
NDK crystal
reference
Crystal
equivalent
series
resistance
ESR
Crystal
motional
capacitance
(Cm) fF
Crystal
motional
inductance
(Lm) mH
Load on
xtalin/xtalout
C1 = C2
(pF)1
Shunt
capacitance
between
xtalout
and xtalin
C02 (pF)
4
NX8045GB
300
2.68
591.0
21
2.93
8
300
2.46
160.7
17
3.01
10
NX5032GA
150
2.93
86.6
15
2.91
12
120
3.11
56.5
15
2.93
16
120
3.90
25.3
10
3.00
40
NX5032GA
50
6.18
2.56
8
3.49
1 The values specified for C1 and C2 are the same as used in simulations. It should be ensured that the testing
includes all the parasitics (from the board, probe, crystal, etc.) as the AC / transient behavior depends upon them.
2 The value of C0 specified here includes 2 pF additional capacitance for parasitics (to be seen with bond-pads,
package, etc.).
S_MTRANS bit (ME_GS register)
1
0
VXTAL
VFXOSC
VFXOSCOP
90%
TMXOSCSU
10%
valid internal clock
1/fMXOSC
Figure 11. Fast external crystal oscillator (4 to 40 MHz) electrical characteristics
Table 35. Fast external crystal oscillator (4 to 40 MHz) electrical characteristics
Symbol
C
Parameter
Conditions1
Value2
Min
Typ
Max
fFXOSC
gmFXOSC
SR — Fast external crystal
—
oscillator frequency
CC C Fast external crystal VDD = 3.3 V ± 10%
oscillator
transconductance VDD = 5.0 V ± 10%
4.0
8.699
9.440
—
13.159
13.159
40.0
15.846
16.859
Unit
MHz
mA/V
MPC5646C Microcontroller Data Sheet, Rev. 3
66
Preliminary—Subject to Change Without Notice
Freescale Semiconductor