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MT28C3212P2FL-10B View Datasheet(PDF) - Micron Technology

Part Name
Description
MFG CO.
MT28C3212P2FL-10B
Micron
Micron Technology Micron
'MT28C3212P2FL-10B' PDF : 47 Pages View PDF
2 MEG x 16 PAGE FLASH
128K x 16 SRAM COMBO MEMORY
COMBINED DC CHARACTERISTICS1 (continued)
DESCRIPTION
S_VCC read/write operating
supply current – word access
mode
VPP read current
VPP standby current
VPP erase suspend current
VPP program suspend current
CONDITIONS
VIN = VIH or VIL
chip enabled, IOL = 0
VCC = 1.65V–1.95V or
1.80V–2.20V
VCCQ = 1.65V–1.95V or
1.80V–2.20V
SYMBOL MIN TYP MAX UNITS NOTES
ICC10
3
8
mA
3
VPP VCC
VPP ³ VCC
VPP VCC
VPP ³ VCC
VPP = VPP1
VPP = VPP2
VPP = VPP1
VPP = VPP2
IPP1
1
mA
200
mA
IPP2
1
mA
200
mA
IPP5
1
mA
200
mA
IPP6
1
mA
200
mA
NOTE:
1. All currents are in RMS unless otherwise noted.
2. 12V VPP is supported for a maximum of 100 cycles and may be connected for up to 10 cumulative hours.
3. Operating current is a linear function of operating frequency and voltage. Operating current can be calculated using
the formula shown with operating frequency (f) expressed in MHz and operating voltage (V) in volts.
Example: When operating at 2 MHz at 2V, the device will draw a typical active current of 0.8*2* = 3.2mA in the page
access mode. This parameter is specified with the outputs disabled to avoid external loading effects. The user must
add current required to drive output capacitance expected in the actual system.
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
32
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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