MT28C3212P2FL-10B View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT28C3212P2FL-10B' PDF : 47 Pages View PDF
2 MEG x 16 PAGE FLASH
128K x 16 SRAM COMBO MEMORY
TWO-CYCLE PROGRAMMING/ERASE OPERATION
A0–A20 VIH
VIL
VIH
CE# VIL
VIH
OE# VIL
VIH
WE# VIL
VOH
DQ0–DQ15 VOL
VIH
RP# VIL
VIH
WP# VIL
VALID ADDRESS
VALID ADDRESS
tAS
tAH
VALID ADDRESS
tCS
tCH
tWOS
tWPH
High-Z
tRS
tWP
CMD
tDH
tWB
CMD/
DATA
tDS
tRHS
STATUS
tRHH
tVPS
tVPPH
VIPPH
VPP
VIPPLK
VIL
UNDEFINED
WRITE TIMING PARAMETERS
SYMBOL
tRS
tCS
tWP
tDS
tAS
tCH
tDH
-10/-11
VCC = 1.65V–1.95V or
1.80V–2.20V
MIN
150
0
50
50
50
0
0
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tAH
tRHS
tVPS
tWOS
tRHH
tVPH
tWB
-10/-11
VCC = 1.65V–1.95V or
1.80V–2.20V
MIN
9
200
200
50
0
0
MAX
tAA+50
UNITS
ns
ns
ns
ns
ns
ns
ns
NOTE: 1. The WRITE cycles for the WORD PROGRAMMING command are followed by a READ ARRAY DATA cycle.
2 Meg x 16 Page Flash 128K x 16 SRAM Combo Memory
MT28C3212P2FL_2.p65 – Rev. 2, Pub. 4/02
35
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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