MT46V4M32 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT46V4M32' PDF : 66 Pages View PDF
CK#
CK
COMMAND
T0
READ
Figure 12
READ to WRITE
T1
T2 T2n T3
BST7
NOP
WRITE
ADVANCE
128Mb: x32
DDR SDRAM
T4 T4n T5 T5n
NOP
NOP
ADDRESS
Bank,
Col n
DQS
DQ
DM
CL = 2
Bank,
Col b
tDQSS
(MIN)
DO
DI
n
b
T0
CK#
CK
T1
T2
T3
T4
T5 T5n
COMMAND
READ
BST7
NOP
NOP
WRITE
NOP
ADDRESS
Bank a,
Col n
DQS
DQ
DM
CL = 3
Bank,
Col b
tDQSS
(MIN)
DO
DI
DI
n
b
b
DON T CARE
TRANSITIONING DATA
NOTE: 1. DO n = data-out from column n.
2. DI b = data-in from column b.
3. Burst length = 4 in the cases shown (applies for bursts of 8 and full page as well; if the burst
length is 2,the BST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal tAC, tDQSCK, and tDQSQ.
7. BST = BURST TERMINATE command.
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
22
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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