MT46V4M32 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT46V4M32' PDF : 66 Pages View PDF
CK#
CK
COMMAND6
T0
READ
ADVANCE
128Mb: x32
DDR SDRAM
Figure 13
READ to PRECHARGE
T1
T2 T2n T3 T3n T4
T5
NOP
PRE
NOP
NOP
ACT
ADDRESS
Bank a,
Col n
DQS
DQ
CK#
CK
COMMAND6
T0
READ
Bank a,
(a or all)
CL = 2
tRP
DO
n
T1
T2
T3 T3n T4
NOP
PRE
NOP
NOP
Bank a,
Row
T5
T6
ACT
NOP
ADDRESS
Bank a,
Col n
Bank a,
(a or all)
tRP
CL = 3
DQS
Bank a,
Row
DQ
DO
n
DON T CARE
TRANSITIONING DATA
NOTE: 1. DO n = data-out from column n.
2. Burst length = 4, or an interrupted burst of 8 or full page.
3. Three subsequent elements of data-out appear in the programmed order following DO n.
4. Shown with nominal tAC, tDQSCK, and tDQSQ.
5. READ to PRECHARGE equals two clocks, which allows two data pairs of data-out.
6. PRE = PRECHARGE command; ACT = ACTIVE command.
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
23
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
Share Link: 
