MT46V4M32 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT46V4M32' PDF : 66 Pages View PDF
CK#
CK
COMMAND
T0
WRITE
Figure 15
WRITE Burst
T1
T2
T2n T3
ADVANCE
128Mb: x32
DDR SDRAM
NOP
NOP
NOP
ADDRESS
Bank a,
Col b
tDQSS (NOM)
DQS
tDQSS
DQ
DI
b
DM
tDQSS (MIN)
DQS
DQ
DM
tDQSS
DI
b
tDQSS (MAX)
DQS
tDQSS
DQ
DI
b
DM
DON T CARE
TRANSITIONING DATA
NOTE: 1. DI b = data-in for column b.
2. Three subsequent elements of data-in are applied in the programmed
order following DI b.
3. An uninterrupted burst of 4 is shown.
4. A8 is LOW with the WRITE command (auto precharge is disabled).
128Mb: x32 DDR SDRAM
4M32DDR_B.p65 – Rev. B, Pub. 7/02
25
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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