256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Electrical Specifications
Electrical Specifications
Absolute Maximum Ratings
Stresses greater than those listed in Table 9 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
Table 9: Absolute Maximum Ratings
Voltage/Temperature
Voltage on VDD/VDDQ supply relative to VSS (1.8V)
Voltage on inputs, NC or I/O balls relative to VSS (1.8V)
Storage temperature plastic
Min
–0.3
–0.3
–55
Max
+2.7
+2.7
+150
Units
V
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 51 and 52; VDD/VDDQ = 1.7–1.95V
Parameter/Condition
Supply voltage
I/O supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output high voltage: All inputs: Iout = –4mA
Output low voltage: All inputs: Iout = 4mA
Input leakage current:
Any input 0V ≤ VIN ≤ VDD (All other balls not under test = 0V)
Operating temperature
TA (commercial)
TA (industrial)
Symbol
VDD
VDDQ
VIH
VIL
VOH
VOL
II
Min
Max
1.7
1.95
1.7
1.95
0.8 × VDDQ VDDQ + 0.3
–0.3
+0.3
0.9 × VDDQ
–
–
0.2
–1.0
1.0
Units
V
V
V
V
V
V
µA
+70
°C
+85
Notes
22
22
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MT48H16M16LF_2.fm - Rev F 4/07 EN
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