MT48H8M32LFBF-8 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48H8M32LFBF-8' PDF : 71 Pages View PDF
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Electrical Specifications
Table 14: IDD Specifications and Conditions (x32)
Notes: 1, 5, 6, 11, 13; notes appear on page 51 and 52; VDD/VDDQ = 1.7–1.95V
Parameter/Condition
Operating current:
Active mode; BL = 1; READ or WRITE; tRC = tRC (MIN)
Standby current:
Power-down mode; All banks idle; CKE = LOW
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No accesses in
progress
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling every
cycle
Auto refresh current:
tRFC = tRFC (MIN)
CKE = HIGH; CS# = HIGH
tRFC = 7.8125µs
Deep power-down
Symbol
IDD1
IDD2P
IDD2N
IDD3P
IDD3N
IDD4
IDD5
IDD6
IZZ
Max
-75
-8
95
90
300
300
20
20
5
5
25
25
120
115
100
95
5
5
10
10
Units
mA
µA
Notes
1, 18,
19
30
mA
mA 1, 12,
19
mA 1, 12,
19
mA 1, 18,
19
mA 1, 12,
18, 26
mA 19, 27
µA 29, 30
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
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