MT48H8M32LFBF-8 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48H8M32LFBF-8' PDF : 71 Pages View PDF
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
Electrical Specifications
Table 15: IDD7 – Self Refresh Current Options
Notes: 2, 28, 30; notes appear on page 51 and page 52
Temperature-Compensated Self Refresh
Parameter/Condition
Self refresh current:
CKE = LOW – 4-bank refresh
Self refresh current:
CKE = LOW – 2-bank refresh
Self refresh current:
CKE = LOW – 1-bank refresh
Self refresh current:
CKE = LOW – Half-bank refresh
Self refresh current:
CKE = LOW – Quarter-bank refresh
Maximum
Temperature
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
85ºC
70ºC
45ºC
15ºC
Figure 33: Typical Self Refresh Current vs. Temperature
150
Full Array
1/2 Array
125
1/4 Array
1/8 Array
100
1/16 Array
Temperature (°C)
Low IDD7
Option “L”
220
175
140
125
200
150
130
115
185
140
120
115
175
125
115
110
170
120
110
105
Standard IDD7
300
210
190
180
275
180
160
150
265
160
140
140
255
150
130
125
250
140
120
115
Units
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
75
50
25
0
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
MT48H16M16LF_2.fm - Rev F 4/07 EN
49
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