MT48LC16M4A2TG View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48LC16M4A2TG' PDF : 55 Pages View PDF
64Mb: x4, x8, x16
SDRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD, VDDQ Supply
Relative to VSS ............................................ -1V to +4.6V
Voltage on Inputs, NC or I/O Pins
Relative to VSS ............................................ -1V to +4.6V
Operating Temperature,
TA (commercial) ...................................... 0°C to +70°C
Operating Temperature,
TA (extended; IT parts) ...................... -40°C to +85°C
Storage Temperature (plastic) ............ -55°C to +150°C
Power Dissipation ........................................................ 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 5, 6; notes appear on page 35); VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
Supply Voltage
Input High Voltage: Logic 1; All inputs
Input Low Voltage: Logic 0; All inputs
Input Leakage Current:
Any input 0V £ VIN £ VDD
(All other pins not under test = 0V)
Output Leakage Current: DQs are disabled; 0V £ VOUT £ VDDQ
Output Levels:
Output High Voltage (IOUT = -4mA)
Output Low Voltage (IOUT = 4mA)
SYMBOL
VDD, VDDQ
VIH
VIL
MIN
3
2
-0.3
MAX UNITS NOTES
3.6
V
VDD + 0.3 V
22
0.8
V
22
II
-5
5
µA
IOZ
-5
5
µA
VOH
2.4
–
V
VOL
–
0.4
V
IDD SPECIFICATIONS AND CONDITIONS
(Notes: 1, 5, 6, 11, 13; notes appear on page 35) ; VDD, VDDQ = +3.3V ±0.3V
PARAMETER/CONDITION
SYMBOL - 6
Operating Current: Active Mode;
Burst = 2; READ or WRITE; tRC >= tRC (MIN)
IDD1
150
Standby Current: Power-Down Mode; All banks idle;
CKE = LOW
IDD2
2
Standby Current: Active Mode;
IDD3
60
CKE = HIGH; CS# = HIGH; All banks active after tRCD met;
No accesses in progress
Operating Current: Burst Mode; Page burst;
READ or WRITE; All banks active
IDD4
180
Auto Refresh Current:
CKE = HIGH; CS# = HIGH
tRFC = tRFC (MIN) IDD5
250
tRFC = 15.625µs
IDD6
3
Self Refresh Current:
Standard
IDD7
1
CKE £ 0.2V
Low power (L)
0.5
MAX
-7E -75 -8E UNITS NOTES
125 115 95
mA 3, 18,
19, 32
2
2
2
mA
32
45 45 35
mA 3, 12,
19, 32
150 140 120
230 210 190
333
111
0.5 0.5 0.5
mA 3, 18,
19, 32
mA 3, 12,
18, 19,
32, 33
mA
4
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
32
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology, Inc.
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