64Mb: x4, x8, x16
SDRAM
AC FUNCTIONAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 11; notes appear on page 35) VDD, VDDQ = +3.3V ±0.3V
PARAMETER
READ/WRITE command to READ/WRITE command
CKE to clock disable or power-down entry mode
CKE to clock enable or power-down exit setup mode
DQM to input data delay
DQM to data mask during WRITEs
DQM to data high-impedance during READs
WRITE command to input data delay
Data-in to ACTIVE command
Data-in to PRECHARGE command
Last data-in to burst STOP command
Last data-in to new READ/WRITE command
Last data-in to PRECHARGE command
LOAD MODE REGISTER command to ACTIVE or REFRESH command
Data-out to high-impedance from PRECHARGE command
SYMBOL -6
tCCD
1
tCKED 1
tPED
1
tDQD 0
tDQM 0
tDQZ 2
tDWD 0
tDAL 5
tDPL
2
tBDL
1
tCDL
1
tRDL
2
tMRD 2
CL = 3 tROH(3) 3
CL = 2 tROH(2) 2
-7E -75
11
11
11
00
00
22
00
45
22
11
11
22
22
33
22
-8E UNITS NOTES
1
tCK
17
1
tCK
14
1
tCK
14
0
tCK
17
0
tCK
17
2
tCK
17
0
tCK
17
4 tCK 15, 21
2 tCK 16, 21
1
tCK
17
1
tCK
17
2 tCK 16, 21
2
tCK
26
3
tCK
17
2
tCK
17
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
34
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©2003, Micron Technology, Inc.