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MT48LC16M4A2TG View Datasheet(PDF) - Micron Technology

Part Name
Description
MFG CO.
MT48LC16M4A2TG
Micron
Micron Technology Micron
'MT48LC16M4A2TG' PDF : 55 Pages View PDF
CAPACITANCE
(Note: 2; notes appear on page 35)
PARAMETER
Input Capacitance: CLK
Input Capacitance: All other input-only pins
Input/Output Capacitance: DQs
64Mb: x4, x8, x16
SDRAM
SYMBOL
CI1
CI2
CIO
MIN
2.5
2.5
4.0
MAX UNITS NOTES
3.5
pF
29
3.8
pF
30
6.0
pF
31
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(Notes: 5, 6, 8, 9, 11; notes appear on page 35); VDD, VDDQ = +3.3V ±0.3V
AC CHARACTERISTICS
-6
-7E
-75
-8E
PARAMETER
Access time from CLK (pos. edge)
Address hold time
Address setup time
CLK high-level width
CLK low-level width
Clock cycle time
CKE hold time
CKE setup time
SYMBOL
CL = 3 tAC(3)
CL = 2 tAC(2)
tAH
tAS
tCH
tCL
CL = 3 tCK(3)
CL = 2 tCK(2)
tCKH
tCKS
MIN
1
1.5
2.5
2.5
6
1
1.5
MAX
5.5
MIN
0.8
1.5
2.5
2.5
7
7.5
0.8
1.5
MAX
5.4
5.4
MIN
0.8
1.5
2.5
2.5
7.5
10
0.8
1.5
MAX
5.4
6
MIN
1
2
3
3
8
10
1
2
MAX UNITS NOTES
6
ns
27
6
ns
ns
ns
ns
ns
ns 23
ns 23
ns
ns
CS#, RAS#, CAS#, WE#, DQM hold time
tCMH
1
0.8
0.8
1
ns
CS#, RAS#, CAS#, WE#, DQM setup time
tCMS 1.5
1.5
1.5
2
ns
Data-in hold time
tDH
1
0.8
0.8
1
ns
Data-in setup time
Data-out high-impedance time
Data-out low-impedance time
tDS
1.5
1.5
1.5
2
CL = 3 tHZ(3)
5.5
5.4
5.4
CL = 2 tHZ(2)
5.4
6
tLZ
1
1
1
1
ns
6
ns
10
6
ns
10
ns
Data-out hold time (load)
Data-out hold time (no load)
ACTIVE to PRECHARGE command
tOH
2
3
3
3
ns
tOHN
1.8
1.8
1.8
1.8
ns 28
tRAS
42 120,000 37 120,000 44 120,000 50 120,000 ns
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
Refresh period (4,096 rows)
AUTO REFRESH period
tRC
60
60
66
70
ns
tRCD
18
15
20
20
ns
tREF
64
64
64
64 ms
tRFC
60
66
66
70
ns
PRECHARGE command period
tRP
18
15
20
20
ns
ACTIVE bank a to ACTIVE bank b command tRRD
12
14
15
20
ns
Transition time
tT
0.3 1.2 0.3 1.2 0.3 1.2 0.3 1.2 ns
7
WRITE recovery time
tWR 1 CLK +
6ns
1 CLK +
7ns
1 CLK +
7.5ns
1 CLK +
7ns
24
12
14
15
15
ns 25
Exit SELF REFRESH to ACTIVE command
tXSR
70
67
75
80
ns 20
64Mb: x4, x8, x16 SDRAM
64MSDRAM_F.p65 – Rev. F; Pub. 1/03
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003, Micron Technology, Inc.
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