PHX8NQ11T View Datasheet(PDF) - Philips Electronics

Part Name

Description

MFG CO.

PHX8NQ11T

N-channel TrenchMOS™ standard level FET

Philips Electronics 

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PHX8NQ11T

N-channel TrenchMOS™ standard level FET

Rev. 01 — 14 May 2004

Product data

1. Product profile

1.1 Description

N-channel enhancement mode field-effect transistor in a fully isolated encapsulated

plastic package using TrenchMOS™ technology.

1.2 Features

s Low on-state resistance

s Isolated package.

1.3 Applications

s DC-to-DC converters

s Switched-mode power supplies.

1.4 Quick reference data

s VDS ≤ 110 V

s Ptot ≤ 27.7 W

s ID ≤ 7.5 A

s RDSon ≤ 180 mΩ.

2. Pinning information

Table 1: Pinning - SOT186A (TO-220F) simplified outline and symbol

Pin

Description

Simplified outline

1

gate (g)

2

drain (d)

mb

3

source (s)

mb

mounting base;

isolated

Symbol

d

g

mbb076

s

1 2 3 MBK110

SOT186A (TO-220F)

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