RC28F256J3D95 View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
'RC28F256J3D95' PDF : 66 Pages View PDF
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Table 7: DC Current Characteristics (Sheet 2 of 2)
VCCQ
2.7 - 3.6V
VCC
2.7 - 3.6V
Test Conditions
Notes
Symbol
Parameter
Typ Max Unit
ICCE
VCC Block Erase or
Clear Block Lock-Bits
Current
35
70
mA CMOS Inputs, VPEN = VCC
1,4
40
80
mA TTL Inputs, VPEN = VCC
ICCWS
ICCES
VCC Program
Suspend or Block
Erase Suspend
Current
Device is enabled (see Table 16, “Chip
10 mA Enable Truth Table for 32-, 64-,
1,5
128- and 256-Mb” on page 31)
Notes:
1.
All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Numonyx or your local sales office for information about typical specifications.
2.
Includes STS.
3.
CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL inputs are either VIL or VIH.
4.
Sampled, not 100% tested.
5.
ICCWS and ICCES are specified with the device selected. If the device is read or written while in erase suspend
mode, the device’s current draw is ICCR and ICCWS.
6.2
DC Voltage specifications
Table 8: DC Voltage Characteristics (Sheet 1 of 2)
VCCQ
VCC
Symbol
Parameter
VIL
Input Low Voltage
VIH
Input High Voltage
Min
–0.5
2.0
2.7 - 3.6 V
2.7 - 3.6 V
Max
0.8
VCCQ + 0.5V
0.4
VOL
Output Low Voltage
0.2
VOH
Output High Voltage
0.85 × VCCQ
VCCQ – 0.2
VPENLK
VPEN Lockout during Program,
Erase and Lock-Bit Operations
2.2
Test Conditions
Unit
V
V
V
V
V
V
V
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 2 mA
VCC = VCCMin
VCCQ = VCCQ Min
IOL = 100 µA
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –2.5 mA
VCC = VCCMIN
VCCQ = VCCQ Min
IOH = –100 µA
Notes
2, 5, 6
2, 5, 6
1, 2
1, 2
2, 3
December 2007
316577-06
Datasheet
21
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