RC28F256J3D95 View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
'RC28F256J3D95' PDF : 66 Pages View PDF
Numonyx™ Embedded Flash Memory (J3 v D, Monolithic)
Figure 11: 8-Word Asynchronous Page Mode Read
A[MAX:4] [A]
A[3:1] [A]
CEx [E]
OE# [G]
WE# [W]
D[15:0] [Q]
RP# [P]
BYTE#
R1
R2
R3
R4
R6
R7
R10
R15
1
2
R10
R8
R9
7
8
R5
Notes:
1.
CEX low is defined as the last edge of CE0, CE1, or CE2 that enables the device. CEX high is defined at the first edge of
CE0, CE1, or CE2 that disables the device (see Table 16, “Chip Enable Truth Table for 32-, 64-, 128- and
256-Mb” on page 31).
2.
In this diagram, BYTE# is asserted high
Table 11: AC Read Specifications differences for 65nm
Asynchronous Specifications VCC = 2.7 V–3.6 V (3) and VCCQ = 2.7 V–3.6 V(3)
#
Sym
Parameter
Package
Min
Max
Unit
R1
tAVAV
R2
tAVQV
R3
tELQV
Read/Write Cycle Time
Address to Output Delay
CEX to Output Delay
TSOP
TSOP
TSOP
95
ns
105
95
ns
105
95
ns
105
Notes
1
1
1
1
1
1
Notes:
1.
This is the recommended specification for all new designs supporting both 130nm and 65nm lithos, or for new designs that
will use the 65nm lithography.
Datasheet
26
December 2007
316577-06
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