IC Memory
Dynamic RAM
s Low Voltage Operation 64M Dynamic RAM
Organization
(words ∞ bits)
Part number
Access Refresh
time cycle
MAX. (cycles/
(ns) ms)
16M ∞ 4
8M ∞ 8
4M ∞ 16
µPD4264400 50 8K/64*
60
70
µPD4265400 50 4K/64
60
70
µPD4264800 50 8K/64*
60
70
µPD4265800 50 4K/64
60
70
µPD4264160 50 8K/64*
60
70
µPD4265160 50 4K/64
60
70
* CBR/Hidden Refresh: 4K/64
Maximum supply
current
Active
(mA)
Standby
(mA)
Supply
voltage
(V)
Package
Remarks
100
0.5 3.3±0.3 • 32-pin SOJ (400 mil) Fast page
90
• 32-pin TSOP II (400 mil)
80
130
110
100
105
–
95
85
135
115
105
110
• 50-pin TSOP II (400 mil) Fast page + Byte read/write
100
90
140
120
110
s Low Voltage Operation 64M Dynamic RAM with Self Refresh
Organization
(words ∞ bits)
16M ∞ 4
8M ∞ 8
4M ∞ 16
Part number
Access Refresh
time cycle
MAX. (cycles/
(ns) ms)
µPD42S644005 50
60
70
µPD42S654005 50
60
70
µPD42S648005 50
60
70
µPD42S658005 50
60
70
µPD42S641605 50
60
70
8K/128*
4K/128
8K/128*
4K/128
8K/128*
µPD42S651605 50
60
70
4K/128
Maximum supply current
Active Standby
Self
refresh
Long
refresh
(mA) (mA)
(µA) (µA)
Supply
voltage
(V)
Package
100
0.2
300
300 3.3±0.3 • 32-pin SOJ (400 mil)
90
• 32-pin TSOP II
80
(400 mil)
130
110
100
105
95
85
135
115
105
110
• 50-pin TSOP II
100
(400 mil)
90
140
120
110
Remarks
Fast page
* CBR/Hidden Refresh: 4K/128
5: Under development
64