IC Memory
Dynamic RAM
s 4M Dynamic RAM (Hyper Page Mode*)
Organization
(words ∞ bits)
Part number
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
256K ∞ 16
µPD424210
60-G
70
512/8
*: Hyper Page Mode is equivalent to EDO
Maximum supply current
Active
(ms)
Standby
(mA)
Long
refresh
(µA)
160
1
–
150
Supply
voltage
(V)
Package
Remarks
5±10 % • 40-pin SOJ (400 mil)
Hyper page
• 44-pin TSOP II (400 mil) Byte read/write
s 4M Dynamic RAM with Self Refresh (Hyper Page Mode*)
Organization
(words ∞ bits)
256K ∞ 16
Part number
µPD42S4210
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
Maximum supply current
Self Long
Active Standby refresh refresh
(ms) (mA) (µA) (µA)
Supply
voltage
(V)
Package
60-G 512/128 160 0.15
150
200 5±10 % • 40-pin SOJ (400 mil)
70
150
• 44-pin TSOP II (400 mil)
Remarks
Hyper page
Byte read/write
*: Hyper Page Mode is equivalent to EDO
s Low Voltage Operation 4M Dynamic RAM (Hyper Page Mode*)
Organization
(words ∞ bits)
256K ∞ 16
Part number
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
µPD424210AL 60
70
80
512/8
*: Hyper Page Mode is equivalent to EDO
Maximum supply current
Active
(ms)
Standby
(mA)
80
0.5
70
60
Supply
voltage
(V)
Package
Remarks
3.3±0.3 • 40-pin SOJ (400 mil)
Hyper page
• 44-pin TSOP II (400 mil) Byte read/write
s Low Voltage Operation 4M Dynamic RAM with Self Refresh (Hyper Page Mode*)
Organization
(words ∞ bits)
256K ∞ 16
Part number
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
Maximum supply current
Self Long
Active Standby refresh refresh
(ms) (mA) (µA) (µA)
Supply
voltage
(V)
Package
Remarks
µPD42S4210AL 60 512/128 80 0.08
80
100 3.3±0.3 • 40-pin SOJ (400 mil)
Hyper page
70
70
• 44-pin TSOP II (400 mil) Byte read/write
80
60
*: Hyper Page Mode is equivalent to EDO
70