IC Memory
Dynamic RAM
s 16M Dynamic RAM
Organization
(words ∞ bits)
4M ∞ 4
2M ∞ 8
1M ∞ 16
Part number
Access Refresh
time cycle
MAX. (cycles/
(ns) ms)
µPD4216400 50
60
70
80
4K/64
µPD4217400 50
60
70
80
µPD4216800 50
60
70
80
2K/32
4K/64
µPD4217800 50
60
70
80
2K/32
µPD4216160 60
70
80
4K/64
µPD4218160 60
70
80
1K/16
Maximum supply
current
Active
(mA)
Standby
(mA)
Supply
voltage
(V)
Package
Remarks
100
1
5±10 % • 26-pin SOJ (300 mil) Fast page
90
• 26-pin TSOP II (300 mil)
80
70
10
110
100
90
100
• 28-pin SOJ (400 mil)
90
• 28-pin TSOP II (400 mil)
80
70
120
110
100
90
100
• 42-pin SOJ (400 mil)
Fast page + Byte read/write
90
• 50-pin TSOP II (400 mil)
80
160
150
140
s 16M Dynamic RAM with Self Refresh
Organization
(words ∞ bits)
4M ∞ 4
2M ∞ 8
1M ∞ 16
Part number
Access Refresh
time cycle
MAX. (cycles/
(ns) ms)
Maximum supply current
Active
Standby
Self
refresh
Long
refresh
(mA) (mA) (µA) (µA)
Supply
voltage
(V)
Package
µPD42S16400 50 4K/128 100 0.25
250
450 5±10 % • 26-pin SOJ (300 mil)
60
90
• 26-pin TSOP II
70
80
(300 mil)
80
70
µPD42S17400 50 2K/128 120
400
60
110
70
100
80
90
µPD42S16800 50
60
70
80
4K/128 100
90
80
70
450
• 28-pin SOJ (400 mil)
• 28-pin TSOP II
(400 mil)
µPD42S17800 50 2K/128 120
400
60
110
70
100
80
90
µPD42S16160 60
70
80
4K/128 100
90
80
450
• 42-pin SOJ (400 mil)
• 50-pin TSOP II
(400 mil)
µPD42S18160 60 1K/128 160
350
70
150
80
140
Remarks
Fast page
Fast page +
Byte read/write
65