IC Memory
Dynamic RAM
s 4M Dynamic RAM
Organization
(words ∞ bits)
1M ∞ 4
512K ∞ 8
256K ∞ 16
Part number
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
µPD424400
60 1K/16
70
µPD424400-L 60 1K/128
70
µPD424800
60 1K/16
70
80
µPD424260
60 512/8
70
80
Maximum supply current
Active
(ms)
Standby
(mA)
Long
refresh
(µA)
120
1
–
100
120
0.2
300
100
105
1
–
105
95
160
160
145
Supply
voltage
(V)
Package
Remarks
5±10 % • 26-pin SOJ (300 mil)
Fast page
• 26-pin TSOP II (300 mil)
• 28-pin SOJ (400 mil)
• 28-pin TSOP II (400 mil)
• 40-pin SOJ (400 mil)
Fast page
• 44-pin TSOP II (400 mil) Byte read/write
s 4M Dynamic RAM with Self Refresh
Organization
(words ∞ bits)
1M ∞ 4
512K ∞ 8
256K ∞ 16
Part number
µPD42S4400
µPD42S4800
µPD42S4260
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
60 1K/128
70
60 1K/128
70
80
60 512/128
70
80
Maximum supply current
Self Long
Active Standby refresh refresh
(ms) (mA) (µA) (µA)
Supply
voltage
(V)
Package
120 0.15
150
200 5±10 % • 26-pin SOJ (300 mil)
100
• 26-pin TSOP II (300 mil)
105
• 28-pin SOJ (400 mil)
105
• 28-pin TSOP II (400 mil)
95
160
• 40-pin SOJ (400 mil)
160
• 44-pin TSOP II (400 mil)
145
Remarks
Fast page
Fast page
Byte read/write
s Low Voltage Operation 4M Dynamic RAM
Organization
(words ∞ bits)
256K ∞ 16
Part number
Access Refresh
time cycle
MAX. (cycles/
(ns) ms)
µPD424260AL 60
70
80
512/8
Maximum supply current
Active
(ms)
Standby
(mA)
80
0.5
70
60
Supply
voltage
(V)
Package
Remarks
3.3±0.3 • 40-pin SOJ (400 mil)
Fast page
• 44-pin TSOP II (400 mil) Byte read/write
s Low Voltage Operation 4M Dynamic RAM with Self Refresh
Organization
(words ∞ bits)
256K ∞ 16
Part number
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
Maximum supply current
Self Long
Active Standby refresh refresh
(ms) (mA) (µA) (µA)
Supply
voltage
(V)
Package
Remarks
µPD42S4260AL 60 512/128 80 0.08
80
100 3.3±0.3 • 40-pin SOJ (400 mil)
Fast page
70
70
• 44-pin TSOP II (400 mil) Byte read/write
80
60
69