IC Memory
Dynamic RAM
s Low Voltage Operation 16M Dynamic RAM (Hyper Page Mode*)
Organization
(words ∞ bits)
Part number
Access Refresh
time cycle
MAX. (cycles/
(ns) ms)
4M ∞ 4
2M ∞ 8
1M ∞ 16
µPD42164005L 60
70
80
µPD4217401L 60
70
80
µPD4217801L 60
70
80
µPD4216161L 60
70
80
µPD4218161L 60
70
80
4K/64
2K/32
2K/32
4K/64
1K/16
*: Hyper Page Mode is equivalent to EDO
Maximum supply
current
Active
(mA)
Standby
(mA)
Supply
voltage
(V)
Package
80
0.5 3.3±0.3 • 26-pin SOJ (300 mil)
70
• 26-pin TSOP II
60
(300 mil)
100
90
80
100
• 28-pin SOJ (400 mil)
90
• 28-pin TSOP II
80
(400 mil)
90
• 42-pin SOJ (400 mil)
80
• 50-pin TSOP II
70
(400 mil)
150
140
130
Remarks
Hyper page
–
Hyper page +
Byte read/write
s Low Voltage Operation 16M Dynamic RAM with Self Refresh (Hyper Page Mode*)
Organization
(words ∞ bits)
4M ∞ 4
2M ∞ 8
1M ∞ 16
Part number
Access
time
MAX.
(ns)
Refresh
cycle
(cycles/
ms)
Maximum supply current
Self Long
Active Standby refresh refresh
(mA) (mA) (µA) (µA)
Supply
voltage
(V)
Package
µPD42S16401L 60 4K/128
80 0.15
150
220 3.3±0.3 • 26-pin SOJ (300 mil)
70
70
• 26-pin TSOP II
80
60
(300 mil)
µPD42S17401L 60 2K/128 100
200
70
90
80
80
µPD42S17801L 60
70
80
2K/128 100
90
80
200
• 28-pin SOJ (400 mil)
• 28-pin TSOP II
(400 mil)
µPD42S16161L 60
4K/128
90
70
80
80
70
220
• 42-pin SOJ (400 mil)
• 50-pin TSOP II
(400 mil)
µPD42S18161L 60 1K/128 150
180
70
140
80
130
Remarks
Hyper page
Hyper page +
Byte read/write
*: Hyper Page Mode is equivalent to EDO
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