ST6369 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
'ST6369' PDF : 71 Pages View PDF
ST6369
MEMORY SPACES (Continued)
Through the programming of the Data RAM Bank
Register (DRBR=E8H) the user can select the
bank or page leaving unaffected the way to ad-
dress the static registers. The way to address the
“dynamic” page is to set the DRBR as described in
Table 5 (e.g. to select EEPROM page 0, the DRBR
has to be loaded with content 01H, see Data
RAM/EEPROM addressing for additional informa-
tion). Bits 0, 1 and 7 of the DRBR are dedicated to
the EEPROM.
The EEPROM pages do not require dedicated in-
structions to be accessed in reading or writing. The
EEPROM is controlled by the EEPROM Control
Register (EECR=EAH). Any EEPROM location can
be read just like any other data location, also in terms
of access time.
To write an EEPROM location takes an average
time of 5 ms (10ms max) and during this time the
EEPROM is not accessible by the Core. A busy
flag can be read by the Core to know the EEPROM
status before trying any access. In writing the
EEPROM can work in two modes: Byte Mode
(BMODE) and Parallel Mode (PMODE).
The BMODE is the normal way to use the
EEPROM and consists in accessing one byte at a
time. The PMODE consists in accessing 8 bytes
per time.
D7. Not used
SB. WRITE ONLY. If this bit is set the EEPROM is
disabled (any access will be meaningless) and
the power consumption of the EEPROM is re-
duced to the leakage values.
Figure 17. EEPROM Control Register
EECR
EEPROM Control Register
(EAH, Read/Wr ite)
D7 D6 D5 D4 D3 D2 D1 D0
EN = EEPROM Enable Bit
BS = EEPROM Busy Bit
PE = Parallel Mode Enable Bit
PS = Parallel Start Bit
Reserved (Must be set Low)
Reserved (Must be set Low)
SB = Stand-by Enable Bit
Unused
D5, D4. Reserved for testing purposes, they must
be set to zero.
PS. SET ONLY. Once in Parallel Mode, as soon as
the user software sets the PS bit the parallel writ-
ing of the 8 adjacent registers will start. PS is inter-
nally reset at the end of the programming
procedure. Note that less than 8 bytes can be writ-
ten; after parallel programming the remaining un-
defined bytes will have no particular content.
PE. WRITE ONLY. This bit must be set by the
user program in order to perform parallel program-
ming (more bytes per time). If PE is set and the
“parallel start bit” (PS) is low, up to 8 adjacent bytes
can be written at the maximum speed, the content
being stored in volatile registers. These 8 adjacent
bytes can be considered as row, whose A7, A6,
A5, A4, A3 are fixed while A2, A1 and A0 are the
changing bytes. PE is automatically reset at the
end of any parallel programming procedure. PE
can be reset by the user software before starting
the programming procedure, leaving unchanged
the EEPROM registers.
BS. READ ONLY. This bit will be automatically set
by the CORE when the user program modifies an
EEPROM register. The user program has to test it
before any read or write EEPROM operation; any
attempt to access the EEPROM while “busy bit” is
set will be aborted and the writing procedure in pro-
gress completed.
EN. WRITE ONLY. This bit MUST be set to one in
order to write any EEPROM register. If the user
program will attempt to write the EEPROM when
EN= “0” the involved registers will be unaffected
and the ”busy bit” will not be set.
AfterRESET thecontent of EECR registerwill be00H.
Notes :
When the EEPROM is busy (BS=”1”) the EECR
can not be accessed in write mode, it is only possi-
ble to read BS status. This implies that as long as
the EEPROM is busy it is not possible to change
the status of the EEPROM control register. EECR
bits 4 and 5 are reserved for test purposes, and
must never be set to “1”.
Additional Notes on Parallel Mode. If the user
wants to perform a parallel programming the first
action should be the set to one the PE bit; from this
moment the first time the EEPROM will be ad-
dressed in writing, the ROW address will be
latched and it will be possible to change it only at
the end of the programming procedure or by reset-
14/67
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