VG4616321B View Datasheet(PDF) - Vanguard International Semiconductor
Part Name
Description
MFG CO.
'VG4616321B' PDF : 82 Pages View PDF
VIS
Preliminary
VG4616321B/VG4616322B
262,144x32x2-Bit
CMOS Synchronous Graphic RAM
Absolute Maximum Rating
Symbol
Item
VIN, VOUT
Input, Output Voltage
VDD, VDDQ
Power Supply Voltage
TOPR
Operating Temperature
TSTG
Storage Temperature
TSOLDER
Soldering Temperature(10s)
PD
Power Dissipation
IOUT
Short Circuit Output Current
Rating
-0.3~VDD + 0.3
-0.3~4.6
0~70
-55~150
260
1
50
Unit
V
V
°C
°C
°C
W
mA
Note
1
1
1
1
1
1
1
Recommended D.C. Operating Conditions (Ta = 0~70°C)
Symbol
Parameter
Min.
VDD
Power Supply Voltage
3.0
VDDQ
Power Supply Voltage (for I/O Buffer)
3.0
VIH
LVTTL Input High Voltage
2.0
VIL
LVTTL Input LOW Voltage
-0.3
Vref
Input Reference Voltage
1.25
VIH
SSTL Input High voltage
VREF+0.2
VIL
SSTL Input Low Voltage
-0.3
VTT
SSTK Teruination Voltage
VREF-0.1
Typ.
3.3
3.3
-
-
1.5
-
-
V
Max.
3.6
3.6
VDD+ 0.3
0.8
1.75
VDDQ+0.3
VREF+0.2
VREF+0.1
Unit
V
V
V
V
V
V
V
V
Note
2
2
2
2
2
2
2
2
Note : the peak to peak AC noise on Vref may not exceed 2%. VREF (DC). Vtt of transmitting device
must track VREF of receiving device. Typically the value of VREF must be about 0.45 * VDDQ of
the transmitting device and VREF track Variations in VDDQ.
Capacitance (VDD = 3.3V, f = 1MHz, Ta = 25°C)
Symbol
Parameter
Min.
CI
Input Capacitance
-
CI/O
Input/Output Capacitance
-
Note: These parameters are periodically sampled and are not 100% tested.
Max.
5
7
Unit
pF
pF
Document:1G5-0145
Rev.1
Page 21
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