LRS1338A View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LRS1338A' PDF : 36 Pages View PDF
Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
DC ELECTRICAL CHARACTERISTICS
TA = -40°C to + 85°C, VCC = 2.7 V to 3.6 V
PARAMETER
SYMBOL
CONDITION
MIN. TYP. MAX. UNIT NOTES
Input leakage current
Output leakage current
Operating supply
current
ILI
VIN = 0V to VCC
-1.5
ILO
F-CE, S-CE = VIH or F-OE, S-OE = VIH or
F-WE, S-WE = VIH, VI/O = 0 V to VCC
-1.5
Read current, F-VPP ≤ F-VCC,
F-CE ≤ 0.2 V, VIN ≥ VCC – 0.2 V or
VIN ≤ 0.2 V
tCYCLE = 200 ns, II/O = 0 mA
ICC
Summation of VCC Byte Write or set lock-bit cur-
rent, and VPP Byte Write or set lock-bit current.
F-VCC ≥ 3.0 V
Summation of VCC Block Erase or Clear Block
lock-bits current, and VPP Block Erase or Clear
Block lock-bits current. F-VCC ≥ 3.0 V
1.5 µA
1.5 µA
25 mA
1
57 mA 2, 3
42 mA 2, 4
ICC
S-CE = 0.2 V, VIN ≥ VCC – 0.2 V or VIN ≥ 0.2 V
tCYCLE = 200 ns, II/O = 0 mA
25 mA
5
Standby current
Output voltage
ISB
ISB
VOL,
VOH
F-CE = VIH, RP = VIH
F-CE ≥ VCC – 0.2 V, RP ≤ 0.2 V
S-CE = VIH
S-CE ≥ VCC – 0.2 V
IOL = 2.0 mA
IOH = 1.0 mA
2.0 mA
6
20 µA
7
3.0 mA
8
0.6 40 µA 9, 10
0.4 V
2.4
V
NOTES:
1. This value is read current (ICCR + IPPR) of flash memory.
2. Sampled but not 100% tested.
3. This value is operation current (ICCW + IPPW) of flash memory.
4. This value is operation current (ICCE + IPPE) of flash memory.
5. This value is operation current (ICC1) of SRAM.
6. This value is standby current (ICCS + IPPS) of flash memory.
7. This value is deep power down current (ICCD + IPPD) of
flash memory.
8. This value is standby current (ISB1) of SRAM
9. This value is standby current (ISB) of SRAM.
10. Reference values at VCC = 3.0 V and TA = +25°C
Data Sheet
5
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