MT55L256L36PF-7.5 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT55L256L36PF-7.5' PDF : 30 Pages View PDF
ABSOLUTE MAXIMUM RATINGS*
Voltage on VDD Supply
Relative to VSS ................................... -0.5V to +4.6V
Voltage on VDDQ Supply
Relative to VSS ....................................... -0.5V to VDD
VIN -0.5V to VDDQ + 0.5V
Storage Temperature (plastic) .......... -55°C to +150°C
Storage Temperature (FBGA) .......... -55°C to +125°C
Junction Temperature** .................................. +150°C
Short Circuit Output Current .......................... 100mA
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
**Junction temperature depends upon package
type, cycle time, loading, ambient temperature, and
airflow. See Micron Technical Note TN-05-14 for more
information.
3.3V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C ≤ TA ≤ +70°C; VDD, VDDQ = +3.3V ±0.165V unless otherwise noted)
DESCRIPTION
Input High (Logic 1) Voltage
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
CONDITIONS
DQ pins
0V ≤ VIN ≤ VDD
Output(s) disabled,
0V ≤ VIN ≤ VDD
IOH = -4.0mA
IOL = 8.0mA
SYMBOL
VIH
VIH
VIL
ILI
ILO
MIN
2.0
2.0
-0.3
-1.0
-1.0
MAX
VDD + 0.3
VDD + 0.3
0.8
1.0
1.0
UNITS
V
V
V
µA
µA
VOH
2.4
–
V
VOL
–
0.4
V
VDD
3.135
3.465
V
VDDQ 3.135
VDD
V
NOTES
1, 2
1, 2
1, 2
3
1, 4
1, 4
1
1, 5
NOTE:
1. All voltages referenced to VSS (GND).
2. Overshoot: VIH ≤ +4.6V for t ≤ tKHKH/2 for I ≤ 20mA
Undershoot: VIL ≥ -0.7V for t ≤ tKHKH/2 for I ≤ 20mA
Power-up: VIH ≤ +3.465V and VDD ≤ +3.135V for t ≤ 200ms
3. MODE pin has an internal pull-up, and input leakage = ±10µA.
4. The load used for VOH, VOL testing is shown in Figure 2. AC load current is higher than the shown DC values. AC I/O
curves are available upon request.
5. VDDQ should never exceed VDD. VDD and VDDQ can be externally wired together to the same power supply.
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
MT55L512L18P_2.p65 – Rev. 6/01
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc.
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