SPC5607BECLLR View Datasheet(PDF) - Freescale Semiconductor
Part Name
Description
MFG CO.
'SPC5607BECLLR' PDF : 92 Pages View PDF
3.10 Flash memory electrical characteristics
Electrical characteristics
3.10.1 Program/Erase characteristics
Table 22 shows the program and erase characteristics.
Table 22. Program and erase specifications
Symbol
C
Parameter
Min
Value
Typ1
Initial
max2
Max3
Unit
Tdwprogram
CC
T16Kpperase
C
Double
—
word (64
bits)
program
time4
16 KB block
—
pre-progra
m and
erase time
22
TBD
500
µs
300
500
5000
ms
T32Kpperase
32 KB block
—
pre-progra
m and
erase time
400
600
5000
ms
T128Kpperas
e
128 KB
—
block
pre-progra
m and
erase time
800
1300
7500
ms
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
4 Actual hardware programming times. This does not include software overhead.
MPC5607B Microcontroller Data Sheet, Rev. 3
Freescale Semiconductor
37
Preliminary—Subject to Change Without Notice
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