28F256L18 View Datasheet(PDF) - Numonyx -> Micron
Part Name
Description
MFG CO.
'28F256L18' PDF : 106 Pages View PDF
Numonyx™ StrataFlash® Wireless Memory (L18)
Figure 22: Write to Synchronous Read Timing
CLK
Address [A]
AD V#
W2
CE# [E}
WE# [W]
OE# [G]
WAIT [T]
Data [D/Q]
W1
RST# [P]
R302
R 301
Latency Count
R2
W5
W8
R306
R 106
R104
W6
R303
R11
W18
W 19
W3
W20
R4
R 15
R 307
W7
W4
D
R 304
R 305
R3
R 304
Q
Q
Note: WAIT shown deasserted and High-Z per OE# deassertion during write operation (RCR[10]=0 Wait asserted low).
7.7
Program and Erase Characteristics
Table 17: Program and Erase Specifications (Sheet 1 of 2)
Nbr.
Symbol
W200
tPROG/W
Program
Time
W200
W201
tPROG/W
tPROG/PB
Program
Time
W451
W452
tBEFP/W
tBEFP/Setup
Program
Parameter
VPPL
Min Typ Max
Conventional Word Programming
Single word
-
90 180
Single cell
-
30
60
Buffered Programming
Single word
-
90 180
One Buffer (32 words)
-
440 880
Buffered Enhanced Factory Programming
Single word
n/a n/a n/a
Buffered EFP Setup
n/a n/a n/a
Erasing and Suspending
Min
-
-
-
-
-
5
VPPH
Typ
Max
Units
Note
s
85 170
µs
1
30
60
85 170
µs
1
340 680
10
-
1,2
µs
-
-
1
Datasheet
38
November 2007
251902-12
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