AS4LC8M8S0-8FTC View Datasheet(PDF) - Alliance Semiconductor
Part Name
Description
MFG CO.
'AS4LC8M8S0-8FTC' PDF : 24 Pages View PDF
CLK
CMD
DQ
(CL = 2,3)
®
Write data
Q0
Q1
Q2
AS4LC8M8S0
AS4LC4M16S0
write cycle
Burst stop
Q3
Precharge command
A Precharge command can be used to interrupt burst read/write operation during the read cycle. During RD, burst read is
terminated and o/p goes to High Z after CAS latency. The same bank can be activated after tRP. During write, burst write
operation is terminated immediately. Data written two cycles prior to the precharge command will be correctly stored. Set
DQM high one cycle before Precharge command and hold it high until Precharge command to mask and avoid writing invalid
data.
CLK
CMD
DQ
Read data
read cycle (CL = 2)
Q0
Q1
PRE
ACT
Q2
Q3
tRP
CLK
CMD
Read data
DQ
read cycle (CL = 3)
PRE
ACT
Q0
Q1
Q2
Q3
CLK
CMD
DQ
DQM
Write data
D0
D1
write cycle (BL = 8)
PRE
ACT
D2
D3
Q4
Masked
tRP
7/5/00
ALLIANCE SEMICONDUCTOR
17
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