AS4LC4M16S0
AS4LC16M4S0
Burst read/single write waveform
CLK
CS
RAS
CAS
WE
BA0/BA1
A10
RAa
A0–A9,A11 RAa
CAa
DQM
CKE
DQ
Activate
Read
Aa0 Aa1 Aa2 Aa3
QQQ Q
®
CAb
CAr
Aa4
Aa5
Single
Write
D
D
CAd
Read
(BL = 4, CL = 3)
Ad0 Ad1 Ad2 Ad3
QQQ Q
Interleaved bank read waveform
CLK
CS
RAS
tCCD
tCCD
tRAS
tCCD
(BL = 4, CL = 3)
tRP
CAS
WE
BA0/BA1† Bank
Bank Bank
Bank
Bank
Bank
Bank
Bank
Bank
tRCD
A10
RAa
tRCD
RBa
A0–A9, A11 RAa
CAa RBa
CBa
CAb
CAc
CBb
DQM
CKE
DQ
QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QAb0 QAb1 QAb2 QAc0 QAc1 QAc2 QBb0 QBb1 QBb2 QBb3
Bank A
Active Read
Read
Precharge
Bank B
Read
† BA0 and BA1 together determine which bank undergoes operations.
Read
Precharge
20
ALLIANCE SEMICONDUCTOR
7/5/00