LH28F040SUTD-Z4 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F040SUTD-Z4' PDF : 32 Pages View PDF
4M (512K × 8) Flash Memory
LH28F040SUTD-Z4
DC Characteristics
VCC = 3.3 V ± 0.3 V, TA = -20°C to +70°C
Following is the current consumption of one bank. For the current consumption of one device total, please refer to
Note 5.
SYMBOL
PARAMETER
IIL
Input Load Current
ILO
Output Leakage
Current
ICCS VCC Standby Current
ICCR1
VCC Read Current
(10 MHz Operation)
ICCR2
VCC Read Current
(5 MHz Operation)
ICCW
ICCE
ICCES
IPPS
VCC Write Current
VCC Block Erase
Current
VCC Erase Suspend
Current
VPP Standby Current
TYP.
5
0.3
10
8
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
±2
µA VCC = VCC MAX., VIN = VCC or GND
1
±20
µA VCC = VCC MAX., VIN = VCC or GND
1
10
µA VCC = VCC MAX.,
BE »0, BE »1 = VCC ±0.2 V
4
mA VCC = VCC MAX.,
BE »0, BE »1 = VIH
1, 4, 5
VCC = VCC MAX.,
CMOS: BE »0, BE »1 = GND ±0.2 V
35
mA
Inputs = GND ±0.2 V or VCC ±0.2 V,
TTL: BE»0, BE»1 = VIL,
1, 3,
4, 5
Inputs = VIL or VIH,
f = 10 MHz, IOUT = 0 mA
VCC = VCC MAX.,
CMOS: BE »0, BE »1 = GND ±0.2 V
20
mA
Inputs = GND ±0.2 V or VCC ±0.2 V,
TTL: BE»0, BE»1 = VIL,
1, 3,
4, 5
Inputs = VIL or VIH,
f = 5 MHz, IOUT = 0 mA
12
mA
Byte/Two-Byte Serial Write
in Progress
1, 5
6
12 mA Block Erase in Progress
1, 5
3
6
mA BE »0, BE»1 = VIH
Block Erase Suspended
±1
±10
µA VPP ≤ VCC
1, 2, 5
1, 5
21
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