LH28F040SUTD-Z4 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F040SUTD-Z4' PDF : 32 Pages View PDF
LH28F040SUTD-Z4
4M (512K × 8) Flash Memory
AC Characteristics for BE » - Controlled Command Write Operations2
VCC = 3.25 V ± 0.35 V, TA = -20°C to +70°C
SYMBOL
PARAMETER
TYP. MIN. MAX. UNITS NOTE
tAVAV Write Cycle Time
tVPEH VPP Set up to BE»0 or BE»1 Going High
tWLEL WE Setup to BE»0 or BE»1 Going Low
tAVEH Address Setup to BE»0 or BE»1 Going High
tDVEH Data Setup to BE»0 or BE»1 Going High
tELEH BE»0 or BE»1 Pulse Width
tEHDX Data Hold from BE»0 or BE»1 High
tEHAX Address Hold from BE»0 or BE»1 High
tEHWH WE Hold from BE»0 or BE»1 High
tEHEL BE»0 or BE»1 Pulse Width High
tGHEL Read Recovery before Write
tEHGL Write Recovery before Read
tQVVL VPP Hold from Valid Status Register Data
tEHQV1 Duration of Byte Write Operation
20
tEHQV2 Duration of Block Erase Operation
150
100
0
110
110
110
10
10
10
75
0
120
0
8
250
0.3
ns
ns
3
ns
ns
2, 6
ns
2, 6
ns
ns
2
ns
2
ns
ns
ns
ns
µs
µs 4, 5, 7
s
4
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte Write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of BE »0 or BE 1» for all Command Write operations.
7. The MAX. value of byte write time is the maximum wrtie time inside the chip. It is not the time until the whole writing
procedure is completed properly. It is necessary to check CSR to see if the writing procedure is properly completed.
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