LH28F040SUTD-Z4 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F040SUTD-Z4' PDF : 32 Pages View PDF
LH28F040SUTD-Z4
4M (512K × 8) Flash Memory
DC Characteristics (Continued)
VCC = 3.3 V ± 0.3 V, TA = -20°C to +70°C
SYMBOL
PARAMETER
IPPR VPP Read Current
IPPW VPP Write Current
TYPE
65
15
IPPE VPP Erase Current
20
IPPES
VPP Erase Suspend
Current
65
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH1
VOH2
Output High Voltage
VPPL
VPP during Normal
Operations
VPPH
VPP during Write/Erase
Operations
5.0
VLKO
VCC Erase/Write
Lock Voltage
MIN.
MAX. UNITS
TEST CONDITIONS
200
µA VPP > VCC
35
mA
VPP = VPPH, Byte/Two-Byte
Serial Write in Progress
40
mA
VPP = VPPH,
Block Erase in Progress
200
µA
VPP = VPPH,
Block Erase Suspended
-0.3
0.8
V
2.0
VCC + 0.3 V
0.4
V
VCC = VCC MIN. and
IOL = 4 mA
2.4
V
IOH = -2 mA
VCC = VCC MIN.
VCC - 0.2
V
IOH = 100 µA
VCC = VCC MIN.
0.0
5.5
V
4.5
5.5
V
1.4
V
NOTE
1, 5
1, 5
1, 5
1, 5
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3 V, VPP = 5.0 V, T = 25°C.
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Automatic Power Saving (APS) reduces ICCR to less than 2 mA in Static operation.
4. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
5. These are the values of the current which is consumed within one bank area. The value for the bank0 and bank1 should be added in
order to calculate the value for the whole chip. If the bank0 is in write state and bank1 is in read state, the ICC = ICCW + ICCR. If both
banks are in standby mode, the value for the device is 2 times the value in the above table.
22
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