4M (512K × 8) Flash Memory
LH28F040SUTD-Z4
AC Characteristics - Read Only Operations1
VCC = 3.3 V ± 0.3 V, TA = -20°C to +70°C
SYMBOL
PARAMETER
tAVAV
tAVGL
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tOH
Read Cycle Time
Address Setup to OE » Going Low
Address to Output Delay
BE »0, BE »1 to Output Delay
OE » to Output Delay
BE »0, BE »1 to Output in Low Z
BE »0, BE »1 to Output in High Z
OE » to Output in Low Z
OE » to Output in High Z
Output Hold from Address, BE»0, BE»1 or
OE » change, whichever occurs first
MIN.
150
0
0
0
0
MAX.
150
150
50
55
40
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
3
2
2
3
3
3
3
ns
3
AC Characteristics - Read Only Operations1 (Continuted)
VCC = 2.85 V ± 0.15 V, TA = -20°C to +70°C
SYMBOL
PARAMETER
tAVAV
tAVGL
tAVQV
tELQV
tGLQV
tELQX
tEHQZ
tGLQX
tGHQZ
tOH
Read Cycle Time
Address Setup to OE » Going Low
Address to Output Delay
BE »0, BE »1 to Output Delay
OE » to Output Delay
BE »0, BE »1 to Output in Low Z
BE »0, BE »1 to Output in High Z
OE » to Output in Low Z
OE » to Output in High Z
Output Hold from Address, BE»0, BE»1
or OE » change, whichever occurs first
MIN.
190
0
0
0
0
MAX.
190
190
65
70
55
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE
3
2
2
3
3
3
3
ns
3
NOTES:
1. See AC Input/Output Reference Waveforms for timing measurements, Figure 4.
2. OE » may be delayed up to tELQV - tGLQV after the falling edge of BE 0» , BE »1 without impact on tELQV.
3. Sampled, not 100% tested.
23