LH28F040SUTD-Z4
4M (512K × 8) Flash Memory
Erase and Byte Write Performance
VCC = 3.25 V ± 0.35 V, TA = -20°C to +70°C
SYMBOL
PARAMETER
tWHRH1
tWHRH2
tWHRH3
tWHRH4
Byte Write Time
Two-Byte Serial Write Time
16KB Block Write Time
16KB Block Write Time
Block Erase Time (16KB)
2M Bit Bank Erase Time
TYP.(1)
20
34
0.33
0.28
0.8
9 - 15
MIN.
MAX. UNITS
TEST CONDITIONS
NOTE
250 µs
2, 3
µs
2
1.0
s Byte Write Mode
2
1.0
s Two-Byte Serial Write Mode 2
10
s
2
s
2, 4
NOTES:
1. 25°C, VPP = 5.0 V
2. Excludes System-Level Overhead. It actually indicates the time from input write/erase command until bit7 of status register becomes
ready (WSMS = 0).
3. The MAX. value of byte write time is the maximum write time inside the chip. It is not the time until the whole writing procedure is com-
pleted properly. It is necessary to check CSR to see if the writing procedure is properly completed.
4. Depends on the number of protected blocks.
30