LH28F040SUTD-Z4 View Datasheet(PDF) - Sharp Electronics
Part Name
Description
MFG CO.
'LH28F040SUTD-Z4' PDF : 32 Pages View PDF
LH28F040SUTD-Z4
4M (512K × 8) Flash Memory
AC Characteristics for WE » - Controlled Command Write Operations1
VCC = 3.25 V ± 0.35 V, TA = -20°C to +70°C
SYMBOL
PARAMETER
tAVAV
tVPWH
tELWL
tAVWH
tDVWH
tWLWH
tWHDX
tWHAX
tWHEH
tWHWL
tGHWL
tWHGL
tQVVL
tWHQV1
tWHQV2
Write Cycle Time
VPP Set up to WE Going High
BE »0 and BE »1 Setup to WE Going Low
Address Setup to WE Going High
Data Setup to WE Going High
WE Pulse Width
Data Hold from WE High
Address Hold from WE High
BE »0 and BE »1 Hold from WE High
WE Pulse Width High
Read Recovery before Write
Write Recovery before Read
VPP Hold from Valid Status Register Data
Duration of Byte Write Operation
Duration of Block Erase Operation
TYP.
20
MIN.
150
100
0
110
110
110
10
10
10
75
0
120
0
8
0.3
MAX.
250
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
NOTE
3
2, 6
2, 6
2
2
4, 5, 7
4
NOTES:
1. Read timing during write and erase are the same as for normal read.
2. Refer to command definition tables for valid address and data values.
3. Sampled, but not 100% tested.
4. Write/Erase durations are measured to valid Status Register (CSR) Data.
5. Byte write operations are typically performed with 1 Programming Pulse.
6. Address and Data are latched on the rising edge of WE » for all Command Write operations.
7. The maximum value of byte write time is the maximum write time inside the chip. It is not the time until the whole
writing procedure is completed properly. It is necessary to check CSR to see if the writing procedure is properly
completed.
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