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LRS1338A View Datasheet(PDF) - Sharp Electronics

Part Name
Description
MFG CO.
LRS1338A
Sharp
Sharp Electronics Sharp
'LRS1338A' PDF : 36 Pages View PDF
LRS1338A
Stacked Chip (8M Flash & 2M SRAM)
READ ARRAY COMMAND
Upon initial device power-up and after exit from
deep power-down mode, the device defaults to read
array mode. This operation is also initiated by writing
the Read Array command. The device remains
enabled for reads until another command is written.
Once the internal WSM has started a block erase or
word write, the device will not recognize the Read Array
command until the WSM completes its operation
unless the WSM is suspended via an Erase Suspend
or Word Write Suspend command. The Read Array
command functions independently of VPP voltage and
RP can be VIH or VHH.
READ IDENTIFIER CODES COMMAND
The identifier code operation is initiated by writing the
Read Identifier Codes command. Following the com-
mand write, read cycles from addresses shown in Fig-
ure 5 retrieve the manufacturer and device codes (see
Table 7 for identifier code values). To terminate the
operation, write another valid command. Like the Read
Array command, the Read Identifier Codes command
functions independently of the VPP voltage and RP can
be VIH or VHH. Following the Read Identifier Codes
command, the following information can be read.
Table 7. Identifier Codes
CODE
Manufacture Code
Device Code (Top Boot)
ADDRESS
00000H
00001H
DATA
00B0H
0060H
READ STATUS REGISTER COMMAND
The status register may be read to determine when
a block erase or word write is complete and whether
the operation completed successfully. It may be read at
any time by writing the Read Status Register com-
mand. After writing this command, all subsequent read
operations output data from the status register until
another valid command is written. The status register
contents are latched on the falling edge of OE or CE,
whichever occurs. OE or CE must toggle to VIH before
further reads to update the status register latch. The
Read Status Register command functions indepen-
dently of the VPP voltage. RP can be VIH or VHH.
CLEAR STATUS REGISTER COMMAND
Status register bits SR.5, SR.4, SR.3 or SR.1 are set
to 1s by the WSM and can only be reset by the Clear
Status Register command. These bits indicate various
failure conditions (see Table x). By allowing system
software to reset these bits, several operations (such
as cumulatively erasing multiple blocks or writing sev-
eral words in sequence) may be performed. The status
register may be polled to determine if an error occurred
during the sequence.
To clear the status register, the Clear Status Regis-
ter command (50H) is written. It functions indepen-
dently of the applied VPP voltage. RP can be VIH or
VHH. This command is not functional during block
erase or word write suspend modes.
BLOCK ERASE COMMAND
Erase is executed one block at a time and initiated
by a two-cycle command. A block erase setup is first
written, followed by a block erase confirm. This com-
mand sequence requires appropriate sequencing and
an address within the block to be erased (erase
changes all block data to FFFFH). Block precondition-
ing, erase, and verify are handled internally by the
WSM (invisible to the system). After the two-cycle block
erase sequence is written, the device automatically
outputs status register data when read (see Figure 6).
The CPU can detect block erase completion by analyz-
ing the output data of the status register bit SR.7.
When the block erase is complete, status register bit
SR.5 should be checked. If a block erase error is
detected, the status register should be cleared before
system software attempts corrective action. The CUI
remains in read status register mode until a new com-
mand is issued.
This two-step command sequence of set-up fol-
lowed by execution ensures that block contents are not
accidentally erased. An invalid Block Erase command
sequence will result in both status register bits SR.4
and SR.5 being set to 1. Also, reliable block erasure
can only occur when VCC = VCC1 and VPP = VPPH. In
the absence of this high voltage, block contents are
protected against erasure. If block erase is attempted
while VPP VPPLK, SR.3 and SR.5 will be set to 1.
Successful block erase for boot blocks requires that if
set WP = VIH or RP = VHH. If block erase is attempted
to boot block when the corresponding WP = VIL or
RP = VIH, SR.1 and SR.5 will be set to 1. Block erase
operations with VIH < RP < VHH produce spurious
results and should not be attempted.
12
Data Sheet
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