SELF REFRESH MODE
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
T0
CLK
tCK
CKE
tCKS tCKH
COMMAND
tCMS tCMH
PRECHARGE
DQMU, DQML
A0-A9, A11
A10
BA0, BA1
ALL BANKS
SINGLE BANK
tAS tAH
BANK(S)
High-Z
DQ
Precharge all
active banks
T1
tCH
T2
tCL
tCKS
((
))
((
> tRA)S)
((
))
Tn + 1
( ( To + 1
))
((
))
((
))
((
))
NOP
((
AUTO
))
REFRESH ( (
))
((
))
((
))
((
))
((
))
((
))
((
))
((
))
NOP ( (
))
((
))
((
))
((
))
((
))
((
))
((
))
((
((
))
))
((
((
))
))
((
((
))
))
tRP
tXSR
Enter self refresh mode
Exit self refresh mode
(Restart refresh time base)
CLK stable prior to exiting
self refresh mode
To + 2
AUTO
REFRESH
DON’T CARE
TIMING PARAMETERS
SYMBOL*
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
-8
MIN MAX
1
2.5
3
3
8
10
20
-10
MIN MAX
1
2.5
3
3
10
12
25
UNITS
ns
ns
ns
ns
ns
ns
ns
*CAS latency indicated in parentheses.
SYMBOL*
tCKH
tCKS
tCMH
tCMS
tRAS
tRP
tXSR
-8
MIN MAX
1
2.5
1
2.5
48 120,000
20
80
-10
MIN MAX UNITS
1
ns
2.5
ns
1
ns
2.5
ns
50 120,000 ns
20
ns
100
ns
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
44
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.