MT48V4M32LFFF-10 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48V4M32LFFF-10' PDF : 61 Pages View PDF
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
READ – FULL-PAGE BURST1
T0
T1
T2
T3
CLK
tCL
tCK
tCH
tCKS tCKH
CKE
tCMS tCMH
COMMAND
ACTIVE
NOP
READ
NOP
DQMU, DQML
tCMS tCMH
A0-A9, A11
tAS tAH
ROW
tAS tAH
A10
ROW
BA0, BA1
tAS tAH
BANK
COLUMN m 2
BANK
DQ
tRCD
tAC
tLZ
CAS Latency
T4
NOP
T5
NOP
T6
( ( Tn + 1
))
((
))
((
))
((
))
((
))
NOP ( (
))
((
))
((
))
NOP
Tn + 2
Tn + 3
BURST TERM
NOP
Tn + 4
NOP
((
))
((
))
((
))
((
))
((
))
((
))
tAC
tOH
DOUT m
tAC
tOH
DOUT m+1
tAC ( (
tOH ) )
((
))
DOUT m+2( (
))
512 (x16) locations within same row
tAC
tOH
DOUT m-1
tAC
tOH
DOUT m
tOH
DOUT m+1
tHZ
Full page completed
Full-page burst does not self-terminate.
Can use BURST TERMINATE command. 3
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL*
tAC (3)
tAC (2)
tAC (1)
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
-8
MIN MAX
7
8
19
1
2.5
3
3
8
10
20
-10
MIN MAX
7
8
22
1
2.5
3
3
10
12
25
ns
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the CAS latency = 2.
2. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
3. Page left open; no tRP.
SYMBOL*
tCKH
tCKS
tCMH
tCMS
tHZ (3)
tHZ (2)
tHZ (1)
tLZ
tOH
tRCD
-8
MIN MAX
1
2.5
1
2.5
7
8
19
1
2.5
20
-10
MIN MAX
1
2.5
1
2.5
7
8
22
1
2.5
20
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
50
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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