MT48V4M32LFFF-10 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48V4M32LFFF-10' PDF : 61 Pages View PDF
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
SINGLE READ – WITH AUTO PRECHARGE1
T0
CLK
tCKS tCKH
CKE
tCMS tCMH
COMMAND
ACTIVE
T1
tCK
NOP
T2
tCL
tCH
NOP3
DQMU, DQML
A0-A9, A11
tAS tAH
ROW
A10
BA0, BA1
tAS tAH
ROW
tAS tAH
BANK
DQ
tRCD
tRAS
tRC
T3
T4
T5
NOP3
READ
NOP
tCMS tCMH
COLUMN m2
ENABLE AUTO PRECHARGE
BANK
tAC
CAS Latency
tRP
TIMING PARAMETERS
SYMBOL*
tAC (3)
tAC (2)
tAC (1)
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
tCKH
tCKS
-8
MIN MAX
7
8
19
1
2.5
3
3
8
10
20
1
2.5
-10
MIN MAX
7
8
22
1
2.5
3
3
10
12
25
1
2.5
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL*
tCMH
tCMS
tHZ (3)
tHZ (2)
tHZ (1)
tLZ
tOH
tRAS
tRC
tRCD
tRP
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 1, and the CAS latency = 2.
2. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
3. READ command not allowed else tRAS would be violated.
T6
T7
T8
NOP
ACTIVE
NOP
ROW
ROW
t OH
DOUT m
tHZ
BANK
DON’T CARE
UNDEFINED
-8
MIN MAX
1
2.5
7
8
19
1
2.5
48 120,000
80
20
20
-10
MIN MAX UNITS
1
ns
2.5
ns
7
ns
8
ns
22
ns
1
ns
2.5
ns
50 120,000 ns
100
ns
20
ns
20
ns
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
48
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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