MT48V4M32LFFF-10 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
'MT48V4M32LFFF-10' PDF : 61 Pages View PDF
ADVANCE
128Mb: x16, x32
MOBILE SDRAM
ALTERNATING BANK READ ACCESSES1
T0
CLK
T1
tCK
tCKS tCKH
CKE
tCMS tCMH
COMMAND
ACTIVE
NOP
DQMU, DQML
A0-A9, A11
tAS tAH
ROW
T2
tCL
tCH
READ
tCMS tCMH
COLUMN m 2
T3
NOP
T4
T5
T6
T7
ACTIVE
NOP
READ
NOP
ROW
COLUMN b 2
T8
ACTIVE
ROW
A10
BA0, BA1
DQ
tAS tAH
ROW
ENABLE AUTO PRECHARGE
ROW
ENABLE AUTO PRECHARGE
ROW
tAS tAH
BANK 0
BANK 0
BANK 3
tAC
tAC
tOH
tAC
tOH
BANK 3
tAC
tOH
tAC
tOH
BANK 0
tAC
tOH
tRCD - BANK 0
tRAS - BANK 0
tRC - BANK 0
tRRD
tLZ
CAS Latency - BANK 0
DOUT m
DOUT m + 1
DOUT m + 2
DOUT m + 3
tRP - BANK 0
DOUT b
tRCD - BANK 0
tRCD - BANK 3
CAS Latency - BANK 3
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL*
tAC (3)
tAC (2)
tAC (1)
tAH
tAS
tCH
tCL
tCK (3)
tCK (2)
tCK (1)
tCKH
-8
MIN MAX
7
8
19
1
2.5
3
3
8
10
20
1
-10
MIN MAX
7
8
22
1
2.5
3
3
10
12
25
1
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL*
tCKS
tCMH
tCMS
tLZ
tOH
tRAS
tRC
tRCD
tRP
tRRD
*CAS latency indicated in parentheses.
NOTE: 1. For this example, the burst length = 4, and the CAS latency = 2.
2. x16: A9 and A11 = “Don’t Care”
x32: A8, A9,and A11 = “Don’t Care”
-8
MIN MAX
2.5
1
2.5
1
2.5
48 120,000
80
20
20
20
-10
MIN MAX UNITS
2.5
ns
1
ns
2.5
ns
1
ns
2.5
ns
50 120,000 ns
100
ns
20
ns
20
ns
20
ns
128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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