Philips Semiconductors
PH955L
N-channel TrenchMOS™ logic level FET
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter
Conditions
Rth(j-mb) thermal resistance from junction to mounting base Figure 4
Min Typ Max Unit
-
-
2
K/W
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10-1
0.02
single pulse
10-2
003aaa778
P
δ = tp
T
10-3
10-5
10-4
10-3
10-2
tp
t
T
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
9397 750 14557
Product data sheet
Rev. 01 — 1 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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