PH955L View Datasheet(PDF) - Philips Electronics
Part Name
Description
MFG CO.
'PH955L' PDF : 12 Pages View PDF
Philips Semiconductors
PH955L
N-channel TrenchMOS™ logic level FET
6. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 250 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 55 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±15 V; VDS = 0 V
VGS = 10 V; ID = 25 A
Tj = 25 °C; Figure 6
Tj = 150 °C; Figure 8
VGS = 4.5 V; ID = 25 A
Qg(tot)
total gate charge
Qgs
gate-source charge
Qgs1
pre-VGS(th) gate-source charge
Qgs2
post-VGS(th) gate-source charge
Qgd
gate-drain (Miller) charge
Vplat
plateau voltage
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
ID = 25 A; VDD = 44 V; VGS = 5 V;
Figure 11 and Figure 12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 14
VDS = 25 V; RL = 1 Ω;
VGS = 5 V; RG = 4.7 Ω
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 13
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
Min Typ Max Unit
55 -
-
V
50 -
-
V
1
1.5 2
V
0.5 -
-
V
-
-
2.3 V
-
0.02 1
µA
-
-
500 µA
-
2
100 nA
-
6.2 8.3 mΩ
-
-
16 mΩ
-
7.1 9.9 mΩ
-
42 -
nC
-
5.7 -
nC
-
4.3 -
nC
-
1.4 -
nC
-
16.4 -
nC
-
2
-
V
-
2 836 -
pF
-
441 -
pF
-
210 -
pF
-
18 -
ns
-
71 -
ns
-
105 -
ns
-
25 -
ns
-
0.85 1.2 V
-
62 -
ns
-
48 -
nC
9397 750 14557
Product data sheet
Rev. 01 — 1 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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