Philips Semiconductors
PH955L
N-channel TrenchMOS™ logic level FET
40
10
2.5
2.3
ID
(A) 5
3
30
20
10
003aaa779
VGS (V) = 2.2
2.1
2
20
RDSon
2
2.1
(mΩ)
16
12
8
4
003aaa782
2.2
2.3
VGS (V) = 2.5
3
4.5
10
0
0
0.5
1
1.5
2
VDS (V)
0
0
10
20
30
40
ID (A)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Tj = 25 °C
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
40
ID
(A)
30
003aaa780
2.4
a
1.8
03aa28
Tj = 150 °C
25 °C
20
1.2
10
0.6
0
0
1
2
3
VGS (V)
Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
9397 750 14557
Product data sheet
Rev. 01 — 1 March 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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