RC28F320J3F75 View Datasheet(PDF) - Micron Technology
Part Name
Description
MFG CO.
RC28F320J3F75
Micron Technology
'RC28F320J3F75' PDF : 66 Pages View PDF
Numonyx® Embedded Flash Memory (J3 65 nm) Single Bit per Cell (SBC)
6.2
DC Voltage specifications
Table 8: DC Voltage Characteristics
VCCQ
2.7 - 3.6 V
VCC
2.7 - 3.6 V
Test Conditions
Notes
Symbol
Parameter
Min
Max
Unit
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
VPENLK
VPEN Lockout during Program,
Erase and Lock-Bit Operations
–0.5
2.0
—
0.8
VCCQ + 0.5
0.4
—
0.2
0.85 × VCCQ
—
VCCQ – 0.2
—
—
2.2
V
—
V
—
VCC = VCCMin
V
VCCQ = VCCQ Min
IOL = 2 mA
VCC = VCCMin
V
VCCQ = VCCQ Min
IOL = 100 µA
VCC = VCCMIN
V
VCCQ = VCCQ Min
IOH = –2.5 mA
VCC = VCCMIN
V
VCCQ = VCCQ Min
IOH = –100 µA
V
—
2, 5, 6
2, 5, 6
1, 2
1, 2
2, 3
VPENH
VPEN during Block Erase, Program,
or Lock-Bit Operations
2.7
3.6
V
—
3
VLKO
VCC Lockout Voltage
—
2.0
V
—
4
Notes:
1.
Includes STS.
2.
Sampled, not 100% tested.
3.
Block erases, programming, and lock-bit configurations are inhibited when VPEN ≤ VPENLK, and not guaranteed in the
range between VPENLK (max) and VPENH (min), and above VPENH (max).
4.
Block erases, programming, and lock-bit configurations are inhibited when VCC ≤ VLKO, and not guaranteed in the range
between VLKO and VCC (min), and above VCC (max).
5.
Includes all operational modes of the device.
6.
Input/Output signals can undershoot to -1.0V referenced to VSS and can overshoot to VCCQ + 1.0V for duration of 2ns or
less, the VCCQ valid range is referenced to VSS.
6.3
Capacitance
Table 9: Capacitance
Symbol
CIN
COUT
Parameter1
Input Capacitance
Output Capacitance
Notes:
1.
Sampled, not 100% tested.
2.
TA = -40 °C to +85 °C, VCC= VCCQ= 0 to 3.6 V.
Type
6
4
Max
7
5
Unit
pF
pF
Condition2
VIN = 0.0 V
VOUT = 0.0 V
Datasheet
22
Jan 2011
208032-03
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