ST7FLITE02Y1B6 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
ST7FLITE02Y1B6
STMicroelectronics
'ST7FLITE02Y1B6' PDF : 124 Pages View PDF
ST7LITE0xY0, ST7LITESxY0
13.6 MEMORY CHARACTERISTICS
TA = -40°C to 105°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
Symbol
Parameter
VRM
Data retention mode 1)
Conditions
Min
Typ
Max
Unit
HALT mode (or RESET)
1.6
V
13.6.2 FLASH Program Memory
Symbol
VDD
tprog
tRET
NRW
Parameter
Operating voltage for Flash write/erase
Programming time for 1~32 bytes 2)
Programming time for 1.5 kBytes
Data retention 4)
Write erase cycles
IDD
Supply current
Conditions
Min
2.4
TA=−40 to +105°C
TA=+25°C
TA=+55°C3)
TA=+25°C
Read / Write / Erase
modes
fCPU = 8MHz, VDD = 5.5V
No Read/No Write Mode
20
10K 7)
Power down mode / HALT
Typ
5
0.24
0
Max Unit
5.5
V
10
ms
0.48
s
years
cycles
2.6 6) mA
100
µA
0.1
µA
13.6.3 EEPROM Data Memory
Symbol
VDD
tprog
tret
NRW
Parameter
Operating voltage for EEPROM
write/erase
Programming time for 1~32 bytes
Data retention 4)
Write erase cycles
Conditions
TA=−40 to +105°C
TA=+55°C 3)
TA=+25°C
Min
Typ
2.4
5
20
300K 7)
Max
Unit
5.5
V
10
ms
years
cycles
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
7. Design target value pending full product characterization.
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