VG36128401A View Datasheet(PDF) - Vanguard International Semiconductor
Part Name
Description
MFG CO.
'VG36128401A' PDF : 69 Pages View PDF
VIS
Preliminary
VG36128401A
VG36128801A
VG36128161A
CMOS Synchronous Dynamic RAM
READ to WRITE Command Interval
CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Command
Read
Write
DQM
DQ
Hi-Z
D0
D1
D2
D3
1 cycle
CLK
Command
DQM
DQ
Burst length=8, CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
Read
Write
Q0
Q1
Q2
D0
D1
D2
Hi-Z is
necessary
CLK
Command
DQM
DQ
example: Burst length=4, CAS latency=3
T0
T1
T2
T3
T4
T5
T6
T7
T8
Read
Write
Q2
Hi-Z is
D0
D1
D2
necessary
The minimum command interval = (4+1) cycles
Document : 1G5-0154
Rev.1
Page 24
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