VG36128401A View Datasheet(PDF) - Vanguard International Semiconductor

Part Name

Description

MFG CO.

VG36128401A

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor 

Prev 31 32 33 34 35 36 37 38 39 40 Next

VIS

Preliminary

VG36128401A

VG36128801A

VG36128161A

CMOS Synchronous Dynamic RAM

AC Parameters for Write Timing (2 of 2)

Burst Length=4, CAS Latency=3,4

T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 T23

CLK

tCH tCL

CKE

tCKS

CS

tCMS

tCK3

tCMH

Begin Auto Precharge Begin Auto Precharge

Bank A

Bank B (Bank D)

tCKH

RAS

CAS

WE

BS

A10

ADD

tAS

tAH

DQM

DQ

tRCD

tRRD

tDAL

tRC

QAa0 QAa1 QAa2 QAa3 QBa0 QBa1 QBa2 QBa3

Activate

Command

Bank A

Write with Activate

Auto Precharge Command

Command Bank B

Bank A (Bank D)

Write with

Auto Precharge

Command

Bank B

(Bank D)

Activate

Command

Bank A

tDS

tDH

tDPL

tRP

QAb0 QAb1 QAb2 QAb3

Write without

Auto Precharge

Command

Bank A

Precharge

Command

Bank A

Activate

Command

Bank A

Document : 1G5-0154

Rev.1

Page 31

Share Link: